Title

Application Of Selective Area Zinc In-Diffusion For Localized P-N Junctions In Integrated Electro-Optic Devices

Abstract

The selective zinc in-diffusion in n-type semiconductors is studied as a viable method of creating isolated islands of p-n junction to fabricate a symmetric integrated Mach-Zehnder modulator. The modulator is subjected to an electric field for electro-optic modulation. The slab waveguide structure is grown by MBE on and consists of an multiple quantum wells (MQW) core bounded on the top and on the bottom by Al0.3Ga0.7As cladding layers. The selective area zinc in-diffusion made possible an application of a reverse bias field across one arm of the integrated Mach-Zehnder modulator. Through the quantum well electro-optic effect, the phase balance of the interferometer is offset while the transmission of the modulator is decreased.

Publication Date

12-1-1999

Publication Title

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volume

2

Number of Pages

435-436

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0033328634 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0033328634

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