Title

Ge-On-Si Approaches To The Detection Of Near-Infrared Light

Abstract

We review our recent results on Ge-based near-infrared photodetectors grown on silicon. We fabricated metal-semiconductor-metal photodetectors based on epitaxial pure-Ge grown on silicon by Chemical Vapor Deposition. Material characterization and device performances are illustrated and discussed. Exploiting a novel approach based on evaporation of polycrystalline-Ge on silicon, we also realized efficient near-infrared photodiodes with good speed and sensitivity. Finally, multiple-element devices were designed, fabricated, and tested, such as a voltage-tunable wavelength-selective photodetector based on a SiGe superlattice and a linear array of 16 photodetectors in poly-Ge on Si.

Publication Date

12-1-1999

Publication Title

IEEE Journal of Quantum Electronics

Volume

35

Issue

12

Number of Pages

1843-1852

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/3.806596

Socpus ID

0033324446 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0033324446

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