Title

Gallium content enhancement in CuIn1-xGaxSe2 thin films prepared by two-selenizations process using Se vapor

Abstract

Gallium content in CuIn1-xGaxSe2 thin films prepared by two-selenizations process using Se vapor has been enhanced by optimizing the metallic layer sequence and selenization parameters. Maintaining a high selenium vapor incidence rate of ≤50 angstrom s-1 increased the Ga content x in the formula CuIn1-xGaxSex from 0.06 to 0.11. Fast temperature rise of 50-90°C min-1 and controlled cooling-down rate to 300°C with a lower Se vapor incidence rate increased the Ga content still further. CuIn1-xGaxSe2-thin-film solar cell having Ga content x of 0.18 showed an open-circuit voltage VVARS of 451.8 mV, a short-circuit current density Jsc of 34.5 mA, a fill factor of 57.87%, and a total-area efficiency of 9.02% with a fairly constant spectral response. The results are significant because the process can be easily scaled up for economic manufacture.

Publication Date

12-1-1996

Publication Title

Conference Record of the IEEE Photovoltaic Specialists Conference

Number of Pages

897-900

Document Type

Article

Identifier

scopus

Socpus ID

0030403389 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0030403389

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