Title

Polycrystalline CuIn1-xGaxSe2 thin film PV solar cells prepared by two-stage selenization process using Se vapor

Abstract

Novel two-stage Se vapor selenization of magnetron sputtered metallic precursors and Ga incorporation using single Cu-Ga(22 at.%) alloy target have been developed for preparation of well-adherent, large, compact, well-faceted polyhedral grain CuIn1-xGaxSe2 thin films having optimum composition Cu:In:Ga:Se of 22.95:25.03:1.40:50.63. Cu-In-Ga precursor homogenization by in situ heat-treatment at approx.90° C for 10 minutes prior to first selenization, selenization temperature of 550-560° C, and Se vapor incidence rate of 50 angstrom sec-1 resulted in improved morphology of completed CuIn1-xGaxSe2 thin films, and solar cells with open circuit voltage Voc of 377 mV, short circuit current density Jsc of 34.8 mA, fill factor FF of 62.5%, active area efficiency of 8.2% (total area efficiency 5.8% limited by FF 49.1%) and fairly constant spectral response over the spectral range.

Publication Date

12-1-1994

Publication Title

Conference Record of the IEEE Photovoltaic Specialists Conference

Volume

1

Number of Pages

190-193

Document Type

Article

Identifier

scopus

Socpus ID

0028708023 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0028708023

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