Title
Fabrication And Characterization Of Metal-Insulator-Semiconductor Field Effect Transistors Using Sputtered Silicon Nitride Film As A Gate Dielectric
Abstract
RF magnetron sputter deposited silicon nitride film was used as the gate dielectric material for the fabrication of metal-insulator-semiconductor field effect transistors. The fabrication process of an enhancement type n-channel device is discussed in detail. The electrical measurements for the fabricated devices indicated low threshold voltages. © 1994 Taylor & Francis Ltd.
Publication Date
1-1-1994
Publication Title
International Journal of Electronics
Volume
77
Issue
1
Number of Pages
61-69
Document Type
Article
Identifier
scopus
Personal Identifier
scopus
DOI Link
https://doi.org/10.1080/00207219408926034
Copyright Status
Unknown
Socpus ID
0012104544 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0012104544
STARS Citation
Sundaram, K. B. and Seshan, S. S., "Fabrication And Characterization Of Metal-Insulator-Semiconductor Field Effect Transistors Using Sputtered Silicon Nitride Film As A Gate Dielectric" (1994). Scopus Export 1990s. 450.
https://stars.library.ucf.edu/scopus1990/450