Title

Deposition Parameters Studies Of Silicon Nitride Films Prepared By Plasma-Enhanced Cvd Process Using Silane-Ammonia

Abstract

Silicon nitride films were deposited by a plasma-enhanced chemical vapour deposition technique using silane-ammonia as the reactant gas mixture. The influence of the process parameters such as flow ratio of the reactant gases, pressure, substrate temperature, r.f. power, time of deposition and electrode spacing, on the deposition and etch rates were investigated and experimental results are presented. © 1993 Chapman & Hall.

Publication Date

12-1-1993

Publication Title

Journal of Materials Science: Materials in Electronics

Volume

4

Issue

4

Number of Pages

283-287

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1007/BF00179225

Socpus ID

0027834740 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0027834740

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