Title

Nonlinear Polarization Switching Near Half The Band Gap In Semiconductors

Abstract

Experimental results of nonlinear polarization switching based on the phenomenon of power-dependent polarization evolution in an AlGaAs strip-loaded waveguide are reported. At 1550 nm, an input peak intensity of 28 GW/cm2 (before the waveguide) results in 30% power switching in a 2-cm-long waveguide. Numerical studies show that we can make the nonlinear switching more efficient by using the nonlinear anisotropy in a multiple-quantum-well waveguide. © 1993 Optical Society of America.

Publication Date

9-15-1993

Publication Title

Optics Letters

Volume

18

Issue

18

Number of Pages

1487-1489

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/OL.18.001487

Socpus ID

0027653356 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0027653356

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