Title
A1Gaas For Nonlinear Integrated Optics At 1.55Μm
Abstract
Semiconductors and in particular A1GaAs operated at photon energies below half the band gap have proven over the last few years to be optimum materials for studying nonlinear guided phenomena, including ultrafast all-optical switching. Here we report experimental results on a range of characterization measurements and implementations of all-optical switching devices.
Publication Date
1-1-1993
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
2041
Number of Pages
153-164
Document Type
Article; Proceedings Paper
Identifier
scopus
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.165609
Copyright Status
Unknown
Socpus ID
85076185256 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85076185256
STARS Citation
Villeneuve, A.; Stegeman, G. I.; and Aitchison, J. S., "A1Gaas For Nonlinear Integrated Optics At 1.55Μm" (1993). Scopus Export 1990s. 574.
https://stars.library.ucf.edu/scopus1990/574