Title

Analytical model for the AlGaAs/GaAs multiemitter finger HBT including self-heating and thermal coupling effects

Abstract

An analytical model which can be used to predict the thermal as well as electronic behaviour of the multiple emitter heterojunction bipolar transistor (HBT) is presented. The model is developed from a knowledge of device make-up (doping concentrations, layer thicknesses etc.), and relevant physics (such as the effects of graded heterojunction, self-heating, thermal coupling and ballast emitter resistance) is included in a unified manner. Thermal runaway phenomenon observed in the multifinger HBT at high current levels has been successfully described. Experimental evidence obtained from six-finger and four-finger HBTs are included in support of the model. The thermal runaway phenomenon is caused by the uneven increase of the base and collector currents at elevated temperatures due to the thermal effect.

Publication Date

12-1-1994

Publication Title

IEE Proceedings: Circuits, Devices and Systems

Volume

141

Issue

6

Number of Pages

469-475

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1049/ip-cds:19941394

Socpus ID

0028727848 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0028727848

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