Title

Avalanche Multiplication In Forward- And Reverse-Active Mode Bipolar Junction Transistors

Abstract

Impact ionization in the reverse-biased base-collector space-charge layer of the bipolar junction transistor (BJT) can cause an avalanche collector current as well as a reverse (or negative) base current. We develop analytical models to predict and compare avalanche phenomena in the BJT biased under forward-active and under reverse-active operations. The models consider a position-dependent electric field in the space-charge layer, the effect of the non-uniform doping profile, and the excess free carriers associated with the current passing through the space-charge layer. For the specified device make-up and parameters used, our results suggest that avalanche is more prominent in the reverse-active BJT than the forward-active BJT. The physics underlying this occurrence is given, and experimental data obtained from an advanced BJT is included in support of the models. © 1993 Taylor & Francis Ltd.

Publication Date

1-1-1993

Publication Title

International Journal of Electronics

Volume

75

Issue

6

Number of Pages

1143-1151

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1080/00207219308907190

Socpus ID

0027803312 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0027803312

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