Title

Optical Waveguide Characterization Of Dielectric Films Deposited By Reactive Low-Voltage Ion Plating

Abstract

We determine the quality of single films of various oxides, which are deposited on thermally oxidized silicon wafers by reactive low-voltage ion plating (RLVIP), by measuring their optical waveguide losses. We use a prism coupler for inserting the radiation of a wavelength-selectable He-Ne laser into the waveguide and a CCD camera for imaging the light scattered from the surface of the films. The waveguide losses of the RLVIP films are typically of the order of 1 to 10 dB/cm. Some data obtained for TiO 2 layers on thermally grown SiO2 and RLVIP SiO2 seem to confirm the presence of an absorbing boundary layer between RLVIP SiO2 and TiO2 that has been found in SiO2-TiO2 multilayers. The waveguide measurements also reveal unusual index gradients in thick (-10 [Lm) single layers of A12 0 3 derived from multimode effective index calculations. © 1993 Optical Society of America.

Publication Date

1-1-1993

Publication Title

Applied Optics

Volume

32

Issue

28

Number of Pages

5640-5644

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/AO.32.005640

Socpus ID

0027680114 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0027680114

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