Title
Optical Waveguide Characterization Of Dielectric Films Deposited By Reactive Low-Voltage Ion Plating
Abstract
We determine the quality of single films of various oxides, which are deposited on thermally oxidized silicon wafers by reactive low-voltage ion plating (RLVIP), by measuring their optical waveguide losses. We use a prism coupler for inserting the radiation of a wavelength-selectable He-Ne laser into the waveguide and a CCD camera for imaging the light scattered from the surface of the films. The waveguide losses of the RLVIP films are typically of the order of 1 to 10 dB/cm. Some data obtained for TiO 2 layers on thermally grown SiO2 and RLVIP SiO2 seem to confirm the presence of an absorbing boundary layer between RLVIP SiO2 and TiO2 that has been found in SiO2-TiO2 multilayers. The waveguide measurements also reveal unusual index gradients in thick (-10 [Lm) single layers of A12 0 3 derived from multimode effective index calculations. © 1993 Optical Society of America.
Publication Date
1-1-1993
Publication Title
Applied Optics
Volume
32
Issue
28
Number of Pages
5640-5644
Document Type
Article
Identifier
scopus
Personal Identifier
scopus
DOI Link
https://doi.org/10.1364/AO.32.005640
Copyright Status
Unknown
Socpus ID
0027680114 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0027680114
STARS Citation
Kimble, Thomas C.; Himel, Marc D.; and Guenther, Karl H., "Optical Waveguide Characterization Of Dielectric Films Deposited By Reactive Low-Voltage Ion Plating" (1993). Scopus Export 1990s. 711.
https://stars.library.ucf.edu/scopus1990/711