Title

Theoretical Prediction Of The Performance Of Si And Sic Bipolar Transistors Operating At High Temperatures

Abstract

Silicon carbide (SiC) is a promising material for semiconductor devices operated at high temperature because of its large energy bendgap, high thermal conductivity and silicon compatibility. This paper develops an analytical model to predict and compare the d.c. and a.c. performance of SiC and conventional Si bipolar junction transistors (BJTs) at high temperatures. Based on the device parameters available in the literature, our calculations show that the SiC BJT indeed possesses a higher current gain than its silicon counterpart as the temperature is increased beyond 500 K. This is primarily because SiC has a larger bandgap than Si.

Publication Date

1-1-1993

Publication Title

IEE Proceedings, Part G: Circuits, Devices and Systems

Volume

140

Issue

4

Number of Pages

289-293

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1049/ip-g-2.1993.0048

Socpus ID

0027643638 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0027643638

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