Title

Electrochemical Etching Of Silicon By Hydrazine

Abstract

The anodic dissolution and passivation of n- and p-type Si in different concentrations of hydrazine solution and etching temperatures were studied. During etching, performed at 70 and 90°C, it was observed that the current-potential characteristics for both n-and p-type Si showed a current reduction after reaching a peak value. A linear 1-V relation was observed for the room temperature etching. A mechanism, which accounts for the semiconductor energy level change in solution as under different biasing conditions, is proposed to give a qualitative explanation of the different 1-V behaviors for n-and p-type semiconductors. © 1993, The Electrochemical Society, Inc. All rights reserved.

Publication Date

1-1-1993

Publication Title

Journal of the Electrochemical Society

Volume

140

Issue

6

Number of Pages

1592-1597

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1149/1.2221607

Socpus ID

0027608534 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0027608534

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