Title

Growth Of Nd:Gdlif4 Single Crystals

Abstract

We report for the first time the growth of high quality single crystals of Nd doped GdLiF 4. We have revised the phase diagram of this system to search for optimum growth composition. The crystals were grown from a highly incongruent peritectic melt using the conventional weight-feed-back automatic diameter control Czochralski puller. Higher Nd doping (up to 4%) was achieved and the lasing performance was encouraging. We believe that the crystal has the potential to be used for diode pumped miniature laser applications.

Publication Date

1-1-1993

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

1863

Number of Pages

9-12

Document Type

Article; Proceedings Paper

Identifier

scopus

Personal Identifier

scopus

Socpus ID

0027307004 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0027307004

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