Title

Growth Of Low-Scattering-Loss Cr3+:Lisralf6 Single Crystals

Abstract

The growth of high quality, low scattering loss Cr doped LiSAF single crystals by Czochralski pulling technique is described. Scattering loss as low as 0.1%/cm has achieved. The loss depends on the Cr doping concentration. We found that maintaining flat interface growth is crucial to reduce scattering loss and minimize wavefront distortion. These low loss materials provide true prospect of all solid state diode pumped tunable laser as well as ultrashort pulse generation and amplification.

Publication Date

1-1-1993

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

1863

Number of Pages

25-30

Document Type

Article; Proceedings Paper

Identifier

scopus

Personal Identifier

scopus

Socpus ID

0027294098 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0027294098

This document is currently not available here.

Share

COinS