Title

The controlled disordering of quantum wells using surface oxidation

Abstract

A new technique has been developed, which allows the controlled, partial disordering of GaAs/AlGaAs multiple quantum wells, using thermal diffusion of aluminium and/or gallium vacancies created by etching the surface oxides. Spectral measurements by photoluminescence and optical absorption indicate that the disordering can result in a blue shift of the effective band edge by up to 40 nm without broadening of the excitonic resonances.

Publication Date

12-1-1994

Publication Title

Semiconductor Science and Technology

Volume

9

Issue

8

Number of Pages

1564-1566

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1088/0268-1242/9/8/021

Socpus ID

0028484358 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0028484358

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