Title

Auger Electron Spectroscopy And Secondary-Ion Mass Spectroscopy Study Of Interdiffusion In Gold-Bismuth Oxide And Aluminium-Bismuth Oxide Thin Films

Abstract

Thin-film bismuth oxide systems were prepared by depositing gold or aluminum on glass substrates, followed by deposition of bismuth over the gold or aluminium metal layer, after which thermal oxidation was carried out to yield a Bi2O3 layer. Auger electron spectroscopy (AES) and secondary-ion mass spectroscopy (SIMS) were performed on these thin-film systems. AES results show that the average stoichiometry of bismuth oxide films is represented by Bi2O3. SIMS analysis suggests that the oxidation process results in extensive interdiffusion for the BiOx-Al-glass system. The extent of interdiffusion in the BiOx-Au-glass system is certainly far less extensive than in the BiOx-Al-glass system. © 1992 Chapman & Hall.

Publication Date

12-1-1992

Publication Title

Journal of Materials Science: Materials in Electronics

Volume

3

Issue

4

Number of Pages

257-262

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1007/BF00703038

Socpus ID

34249842659 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/34249842659

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