Title

All-Optical Bistable Switching With Gain In An Ingaas/Gaas Quantum-Well Waveguide

Abstract

The gain characteristics of strained layer InGaAs quantum well laser amplifiers grown on GaAs substrates have been characterized using a Ti-sapphire laser in both CW and self-mode-locked configuration. All-optical bistability was achieved in such a device through the nonlinear refractive index that arises as a result of the gain saturation of the diode amplifier at high optical intensities. The Ti-sapphire laser was modified to produce wavelength tunable pulses of the order of 150 fs with a 15 nm spectral bandwidth in order to measure the dynamics of the gain using a time resolved optical pump-probe technique. The gain saturation occurs on the time scale of the pulse width of the laser and the initial recovery is extremely fast. This initial speedy recovery on a time scale of 100 fs is followed by a slower recovery with a time constant of 3 ps followed by a much slower recovery of 500 ps.

Publication Date

12-1-1992

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

1704

Number of Pages

476-481

Document Type

Article; Proceedings Paper

Identifier

scopus

Personal Identifier

scopus

Socpus ID

0026967461 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0026967461

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