Title
Laser Doping Of Chromium As A Double Acceptor In Silicon Carbide With Reduced Crystalline Damage And Nearly All Dopants In Activated State
Keywords
Chromium; DLTS; Hall effect measurements; Laser doping; Silicon carbide
Abstract
Chromium, a p-type dopant, has been incorporated into silicon carbide by laser doping. Secondary ion mass spectrometric data revealed enhanced solid solubility (2.29 × 1019 cm-3 in 6H-SiC and 1.42 × 1919 cm-3 in 4H-SiC), exceeding the equilibrium limit (3 × 1017 cm-3 in 6H-SiC above 2500 °C). The roughness, surface chemistry and crystalline integrity of the doped sample were examined by optical interferometry, energy dispersive X-ray spectrometry and transmission electron microscopy, respectively, and showed no crystalline disorder due to laser heating. Deep-level transient spectroscopy confirmed Cr as a deep-level acceptor with activation energies Ev + 0.80 eV in 4H-SiC and Ev + 0.45 eV in 6H-SiC. The Hall effect measurements showed that the hole concentration (1.942 × 1019 cm-3) is almost twice the average Cr concentration (1 × 1019 cm-3), confirming that almost all of the Cr atoms were completely activated to the double acceptor state by the laser-doping process without requiring any additional annealing step.
Publication Date
5-1-2008
Publication Title
Acta Materialia
Volume
56
Issue
8
Number of Pages
1857-1867
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/j.actamat.2007.12.047
Copyright Status
Unknown
Socpus ID
41949125137 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/41949125137
STARS Citation
Bet, Sachin; Quick, Nathaniel; and Kar, Aravinda, "Laser Doping Of Chromium As A Double Acceptor In Silicon Carbide With Reduced Crystalline Damage And Nearly All Dopants In Activated State" (2008). Scopus Export 2000s. 10019.
https://stars.library.ucf.edu/scopus2000/10019