Title

Laser Doping Of Chromium As A Double Acceptor In Silicon Carbide With Reduced Crystalline Damage And Nearly All Dopants In Activated State

Keywords

Chromium; DLTS; Hall effect measurements; Laser doping; Silicon carbide

Abstract

Chromium, a p-type dopant, has been incorporated into silicon carbide by laser doping. Secondary ion mass spectrometric data revealed enhanced solid solubility (2.29 × 1019 cm-3 in 6H-SiC and 1.42 × 1919 cm-3 in 4H-SiC), exceeding the equilibrium limit (3 × 1017 cm-3 in 6H-SiC above 2500 °C). The roughness, surface chemistry and crystalline integrity of the doped sample were examined by optical interferometry, energy dispersive X-ray spectrometry and transmission electron microscopy, respectively, and showed no crystalline disorder due to laser heating. Deep-level transient spectroscopy confirmed Cr as a deep-level acceptor with activation energies Ev + 0.80 eV in 4H-SiC and Ev + 0.45 eV in 6H-SiC. The Hall effect measurements showed that the hole concentration (1.942 × 1019 cm-3) is almost twice the average Cr concentration (1 × 1019 cm-3), confirming that almost all of the Cr atoms were completely activated to the double acceptor state by the laser-doping process without requiring any additional annealing step.

Publication Date

5-1-2008

Publication Title

Acta Materialia

Volume

56

Issue

8

Number of Pages

1857-1867

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.actamat.2007.12.047

Socpus ID

41949125137 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/41949125137

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