Title

Grain Growth And Void Formation In Dielectric-Encapsulated Cu Thin Films

Abstract

Grain growth in 40-nm-thick Cu films encapsulated by over- and under-layers of SiO2, Al2O3, Si3N4, and MgO was investigated. The films were magnetron sputter deposited onto cooled SiO2/Si substrates in an ultrahigh vacuum purity environment. Ex situ annealing was performed at 400 and 800 °C in 1 atm reducing gas. Films deposited at -120 °C exhibited more extensive grain growth after annealing than films deposited at -40 °C. Films annealed at room temperature had grain sizes less than 35 nm. All films exhibited some void formation after annealing at 400 and 800 °C, but the films encapsulated in Al2O3 exhibited the lowest area fraction of voids. The mean grain sizes of the Al2O3-encapsulated films, as measured by the linear intercept method, were 86 and 134 nm after annealing at 400 and 800 °C, respectively. © 2008 Materials Research Society.

Publication Date

7-1-2008

Publication Title

Journal of Materials Research

Volume

23

Issue

7

Number of Pages

2033-2039

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1557/jmr.2008.0254

Socpus ID

48749084276 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/48749084276

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