Title

Evaluating Mosfet Harmonic Distortion By Successive Integration Of The I-V Characteristics

Keywords

Harmonic distortion; Integral non-linearity function; IP2; IP3; THD

Abstract

A new method, which we have named "Full Successive Integrals Method" (FSIM), is presented for evaluating harmonic distortion of semiconductor devices from their static I-V characteristics. To assess the method's applicability, it is used to calculate the harmonic distortion components (Hn) from the measured output characteristics of several experimental n-MOSFETs with various channel lengths. The resulting values of the harmonic components are compared to, and match very well, those obtained through conventional Fourier analysis techniques. The proposed method's main appeal is that its implementation is fast and straight forward, and inherently filters out measurement noise. It can be used to calculate distortion harmonics for any desired input level, without having to deal with AC signals or having to perform lengthy Fourier type analysis. © 2008 Elsevier Ltd. All rights reserved.

Publication Date

7-1-2008

Publication Title

Solid-State Electronics

Volume

52

Issue

7

Number of Pages

1092-1098

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.sse.2008.03.018

Socpus ID

44749087871 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/44749087871

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