Title

Optimization Of Body Diode Reverse Recovery Characteristics Of Lateral Power Mosfets For Synchronous Rectifier Dc-Dc Converters

Abstract

This paper investigates the poor body diode reverse recovery characteristics of lateral power MOSFETs. It is found that the lightly doped P-substrate accommodates an excessive amount of minority carrier storage charge when the body diode between the P-substrate and N-drain is forward biased. The excessive storage charge causes a long tail in the reverse recovery current waveform of the body diode. Two LDMOS structural variations are explored to improve the body diode performance for hard-switching synchronous rectifier DC/DC converter applications. Both simulation and experimental results show that over 90% reduction in reverse recovery charge can be achieved with the new device structures. ©2008 IEEE.

Publication Date

9-17-2008

Publication Title

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Number of Pages

99-102

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/ISPSD.2008.4538907

Socpus ID

51549092519 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/51549092519

This document is currently not available here.

Share

COinS