Title

Gate Oxide Evaluation Under Very Fast Transmission Line Pulse (Vftlp) Cdm-Type Stress

Abstract

Gate oxide breakdown is analyzed under very fast transmission line pulsed (VFTLP) stress, using different pulse - rise times and -widths. The switching of oxide behavior pre- and post- breakdown occurs in tenths of a nanosecond and it shows reproducible voltage and current characteristics. The total stress and time-dependent-dielectric-breakdown (TDDB) during pulsed stress-method are evaluated using the following two procedures: 1) by adding up the total pulsed stress time, and 2) by extrapolation of the pulsed stress time to a constant voltage stress (CVS)-type measurements. It is shown that the latter method allows for a better comparison of identical oxides TDDB under various stress conditions. A methodology to characterize gate oxide breakdown using a single pulse is finally discussed. This is important to assess the gate-oxide failure condition during a charged device model (CDM)-type electrostatic discharge (ESD). ©2008 IEEE.

Publication Date

9-10-2008

Publication Title

Proceedings of the 7th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/ICCDCS.2008.4542669

Socpus ID

51049115761 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/51049115761

This document is currently not available here.

Share

COinS