Title
Resistivity Size Effect In Encapsulated Cu Thin Films
Abstract
The work addresses the resistivity increase in Cu interconnects with decreasing linewidth. The surface and grain boundary scattering parameters in Cu thin films encapsulated in SiO 2 with and without Ta barrier layers are quantified, and grain boundary scattering is shown to be much greater than surface scattering. 21 samples and 17,882 Cu grains were measured to provide the grain size data. This work indicates that significant mitigation of the Cu resistivity increase with decreasing linewidth is possible, if the grain size can be maintained larger than the electron mean free path (39 nm at room temperature). ©2008 IEEE.
Publication Date
9-9-2008
Publication Title
2008 IEEE International Interconnect Technology Conference, IITC
Number of Pages
141-143
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/IITC.2008.4546949
Copyright Status
Unknown
Socpus ID
50949088092 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/50949088092
STARS Citation
Sun, Tik; Yao, Bo; Warren, Andrew; Kumar, Vineet; and Barmak, Katayun, "Resistivity Size Effect In Encapsulated Cu Thin Films" (2008). Scopus Export 2000s. 10289.
https://stars.library.ucf.edu/scopus2000/10289