Title

Properties Of Isotype N-Zno/N-Gan Heterostructures Studied By I-V-T And Electron Beam Induced Current Methods

Abstract

Electrical properties of isotype n-ZnO/n-GaN heterostructures obtained by radio-frequency sputtering of ZnO films on GaN layers are studied by means of temperature dependent current-voltage (I-V-T) characterization and electron beam induced current (EBIC) measurements. The n-ZnO/n-GaN diodes showed highly rectifying behavior with a forward and reverse current ratio of about 10 6 at 5V. From the analysis of I-V-T measurements, a conduction band offset of ∼0.62eV was derived. From EBIC measurements, theminority carrier diffusion length of ZnO was estimated to lie in the range 0.125-0.175νm, while an activation energy was derived as 0.462 0.073V and was attributed to the traps. © IOP Publishing Ltd.

Publication Date

2-27-2008

Publication Title

Journal of Physics Condensed Matter

Volume

20

Issue

8

Number of Pages

-

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1088/0953-8984/20/8/085201

Socpus ID

38949102960 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/38949102960

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