Title
Properties Of Isotype N-Zno/N-Gan Heterostructures Studied By I-V-T And Electron Beam Induced Current Methods
Abstract
Electrical properties of isotype n-ZnO/n-GaN heterostructures obtained by radio-frequency sputtering of ZnO films on GaN layers are studied by means of temperature dependent current-voltage (I-V-T) characterization and electron beam induced current (EBIC) measurements. The n-ZnO/n-GaN diodes showed highly rectifying behavior with a forward and reverse current ratio of about 10 6 at 5V. From the analysis of I-V-T measurements, a conduction band offset of ∼0.62eV was derived. From EBIC measurements, theminority carrier diffusion length of ZnO was estimated to lie in the range 0.125-0.175νm, while an activation energy was derived as 0.462 0.073V and was attributed to the traps. © IOP Publishing Ltd.
Publication Date
2-27-2008
Publication Title
Journal of Physics Condensed Matter
Volume
20
Issue
8
Number of Pages
-
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1088/0953-8984/20/8/085201
Copyright Status
Unknown
Socpus ID
38949102960 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/38949102960
STARS Citation
Alivov, Ya I.; Xiao, B.; Akarca-Biyikli, S.; Fan, Q.; and Morkoç, H., "Properties Of Isotype N-Zno/N-Gan Heterostructures Studied By I-V-T And Electron Beam Induced Current Methods" (2008). Scopus Export 2000s. 10712.
https://stars.library.ucf.edu/scopus2000/10712