Title

A Model Of Mosfet'S Second Breakdown Action In Circuit-Level

Keywords

Circuit-level; Macro block; Modeling; MOS; Second breakdown

Abstract

A method to exact the electrical parameters and model the second breakdown action of MOSFET's under ESD (Electro-Static Discharge) on circuit-level, using TCAD simulation, is presented MOSFET is one of the most important ESD protection devices, and is widely used as I/O protection device in integrated circuits. We present an accurate macro model of the MOSFET based on deep analyzing of the physical mechanism of the second breakdown, using TCAD simulation. This macro model owns fine convergency and accuracy which are of importance to the simulation of the ESD protection ability of the ESD protection network on circuit and system level.

Publication Date

2-1-2008

Publication Title

Chinese Journal of Sensors and Actuators

Volume

21

Issue

2

Number of Pages

361-364

Document Type

Article

Personal Identifier

scopus

Socpus ID

43049108107 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/43049108107

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