Title
Properties Of Si:Cr Annealed Under Enhanced Stress Conditions
Keywords
Annealing; Chromium; Czochralski silicon; High pressure; Implantation; Magnetic ordering; SPER; Structure
Abstract
The effect of hydrostatic argon pressure equal to 105 Pa and 1.1 GPa applied to processing at up to 1270 K (HT) of Si:Cr samples prepared by Cr+ implantation (dose 1×1015 cm-2, 200 keV) into (001) oriented Czochralski silicon, has been investigated by Secondary Ion Mass Spectrometry, photoluminescence, X-ray and SQUID methods. Cr + implantation at this energy and dosage produces amorphous silicon (a-Si) near the implanted ions range. Solid phase epitaxial re-growth (SPER) of a-Si takes place at HT. The Cr profile does not depend markedly on HP applied during processing at 723 K. Si:Cr processed at up to 723 K indicates magnetic ordering. Annealing under 105 Pa at 873 K, 1070 K and 1270 K results in a marked diffusion of Cr toward the sample surface. In the case of processing under 1.1 GPa this diffusion is less pronounced, SPER of a-Si is retarded and the a-Si/Si interface becomes enriched with Cr. The Cr concentration in Si:Cr sample processed at 1270 K under 1.1 GPa forms two distinct maxima, the deeper one at 0.35 μm depth.
Publication Date
1-1-2008
Publication Title
Solid State Phenomena
Volume
131-133
Number of Pages
375-380
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
38549086882 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/38549086882
STARS Citation
Misiuk, Andrzej; Barcz, Adam; Chow, Lee; Surma, Barbara; and Bak-Misiuk, Jadwiga, "Properties Of Si:Cr Annealed Under Enhanced Stress Conditions" (2008). Scopus Export 2000s. 10804.
https://stars.library.ucf.edu/scopus2000/10804