Title

A New Integration-Based Procedure To Separately Extract Series Resistance And Mobility Degradation In Mosfets

Abstract

A new procedure is presented to separate and extract source-and-drain series resistance and mobility degradation factor parameters in MOSFET compact models. It also allows us to extract the device's channel conductance. The procedure is not based on fitting, but on directly calculating the three parameters by solving a system of three simultaneous equations. The equations represent the measured source-to-drain output resistance, obtained from the output characteristics, and its first and second integrals with respect to gate voltage. This method may be applied to a single device, measured in strong inversion as a function of gate voltage, at a small drain bias. © 2009 IOP Publishing Ltd.

Publication Date

11-9-2009

Publication Title

Semiconductor Science and Technology

Volume

24

Issue

10

Number of Pages

-

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1088/0268-1242/24/10/105015

Socpus ID

70350676696 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/70350676696

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