Title

Investigation On Inherently Safe Gate Drive Techniques For Normally-On Wide Bandgap Power Semiconductor Switching Devices

Keywords

Fast-acting startup lockup; Gate driver; Normally-on switch; Wide bandgap semiconductors (WBG)

Abstract

Normally-on wide bandgap power semiconductor devices such as SiC JFET or GaN HFET demonstrate great promise for future power electronics applications, but suffer from power bus shoot-through concerns. This paper investigates new gate drive techniques to make the normally-on WBG devices inherently safe against potential power bus shoot-through failures. A fast-acting startup lockup protection circuit is proposed to derive power directly from the DC bus and generate a negative voltage to hold the WBG device in OFF mode. Simulation and experiment results show that the startup lockup source could generate -12V voltage within a few μs. © 2009 IEEE.

Publication Date

12-28-2009

Publication Title

2009 IEEE Energy Conversion Congress and Exposition, ECCE 2009

Number of Pages

120-125

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/ECCE.2009.5316342

Socpus ID

72449141536 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/72449141536

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