Title
Ingaas Ldmos Power Semiconductor Device Performances
Keywords
Breakdown voltage; Gate charge; LDMOS on-resistance
Abstract
An n-channel In0.65Ga0.35As LDMOS with Al 2O3 as gate dielectric is proposed. Power device parameters such as specific on-resistance, gate charge, and breakdown voltage are examined using two-dimensional device simulation. Comparison between In 0.65Ga0.35As Si devices is made. The InGaAs LDMOS shows a 92% improvement in Ron × Qg over its silicon counterpart.
Publication Date
12-1-2009
Publication Title
Proceedings of the International Conference on Power Electronics and Drive Systems
Number of Pages
1047-1049
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/PEDS.2009.5385692
Copyright Status
Unknown
Socpus ID
77950883552 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/77950883552
STARS Citation
Liu, Yidong; Yuan, Jiann Shiun; and Steighner, Jason, "Ingaas Ldmos Power Semiconductor Device Performances" (2009). Scopus Export 2000s. 11427.
https://stars.library.ucf.edu/scopus2000/11427