Title

Impact Of Oxide Trap Charge On Performance Of Strained Fully Depleted Soi Metal-Gate Mosfet

Abstract

The impact of strain induced oxide trap charge on the performance and reliability of contact etch stop SiN layer capped, fully slhcld~d metal gate, fully depleted SOl (FDSOI) CMOSFET is investigated. For an ultra thin nitride oxide, the position of these oxide trap. charge can be evaluated by variable frequency noise spectrum and variable frequency charge pumping technique, Gate oxide film bending caused by net stress from these strain technologies was considered as the main reason for bulk oxide trap charge formation. We find that a strained SOI MOSFET with a thinner SOI is more subjective to the stress than the thicker one, and the thinner SOI device possesses a higher oxide/Si interface trap charge density which will degrade the channel mobility. On the other hand, more bulk oxide trap, which existed in the strained device having a thicker SOI, was the dominate factor on current/voltage stress induced device degradation. ©2009 IEEE.

Publication Date

12-1-2009

Publication Title

2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009

Number of Pages

197-200

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/EDSSC.2009.5394288

Socpus ID

77949630255 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/77949630255

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