Title

Development Of A Radiation-Hardened Lateral Power Mosfet For Pol Applications

Keywords

Point of load (POL) power conversion; Power mosfet; Radiation effects; Radiation hardening; Single-event burnout; Single-event effects; Single-event gate rupture; Total ionizing dose

Abstract

The radiation response of lateral power MOSFETs in total dose and energetic particle environments is explored. Results indicate that lateral power MOSFETs can be quite susceptible to single-event burnout. Tradeoffs involved in developing radiation hardened lateral power MOSFETs for point-of-load applications are studied using experiments and device simulations. Both design and fabrication process techniques can be used to significantly improve the single-event effect performance of lateral power MOS- FETs, but the trade space between electrical and radiation performance must be carefully considered to produce an optimized design for point-of-load applications. © 2009 IEEE.

Publication Date

12-1-2009

Publication Title

IEEE Transactions on Nuclear Science

Volume

56

Issue

6

Number of Pages

3456-3462

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TNS.2009.2033922

Socpus ID

72349088927 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/72349088927

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