Title
Hot Electron Stress Effect On Dual-Band Power Amplifier And Integrated Mixer-Lna Design For Reliability
Abstract
Channel hot-electron degradations on strained MOSFETs are examined experimentally. The stressed model parameters are used in Spectre RF simulation to investigate the impact of stress time on dual-band power amplifier and mixer-LNA performances. Electrical stress decreases power-added efficiency of dual-band PA and increases noise figure of integrated mixer-low noise amplifier. ©2009 IEEE.
Publication Date
11-16-2009
Publication Title
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Number of Pages
178-181
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/IPFA.2009.5232674
Copyright Status
Unknown
Socpus ID
71049171766 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/71049171766
STARS Citation
Yuan, J. S.; Ma, J.; Hsu, C. W.; and Yeh, W. K., "Hot Electron Stress Effect On Dual-Band Power Amplifier And Integrated Mixer-Lna Design For Reliability" (2009). Scopus Export 2000s. 11520.
https://stars.library.ucf.edu/scopus2000/11520