Title
Indirect Fitting Procedure To Separate The Effects Of Mobility Degradation And Source-And-Drain Resistance In Mosfet Parameter Extraction
Abstract
A new procedure is presented to separate the effects of source-and-drain series resistance and mobility degradation factor in the extraction of MOSFET model parameters. It requires only a single test device and it is based on fitting the ID(VGS, VDS) equation to the measured characteristics. Two types of bidimensional fitting are explored: direct fitting to the drain current and indirect fitting to the measured source-to-drain resistance. The indirect fitting is shown to be advantageous in terms of fewer number of iterations needed and wider extent of initial guess values range. © 2009 Elsevier Ltd. All rights reserved.
Publication Date
7-1-2009
Publication Title
Microelectronics Reliability
Volume
49
Issue
7
Number of Pages
689-692
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/j.microrel.2009.05.005
Copyright Status
Unknown
Socpus ID
67649432917 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/67649432917
STARS Citation
Ortiz-Conde, Adelmo; García-Sánchez, Francisco J.; Muci, Juan; Lugo Muñoz, Denise C.; and Latorre Rey, Álvaro D., "Indirect Fitting Procedure To Separate The Effects Of Mobility Degradation And Source-And-Drain Resistance In Mosfet Parameter Extraction" (2009). Scopus Export 2000s. 11797.
https://stars.library.ucf.edu/scopus2000/11797