Title
Morphology Instability Of Silicon Nitride Nanowires
Abstract
We report that cylinder-shaped Si 3N 4 nanowires are not stable and can gradually transform into nanobelts via surface diffusion during high-temperature annealing. We demonstrate that such instability is driven by the requirements for reducing overall surface energy. The resultant nanobelts have the same width-to-thickness ratio, suggesting a stable morphology. A model in terms of surface energy is proposed to explain the formation of such stable morphology, which agrees well with experimental results. Our result suggests that instability could be a limiting factor for high-temperature applications of 1D nanostructures. © 2009 American Chemical Society.
Publication Date
4-16-2009
Publication Title
Journal of Physical Chemistry C
Volume
113
Issue
15
Number of Pages
5902-5905
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1021/jp901938a
Copyright Status
Unknown
Socpus ID
65249100810 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/65249100810
STARS Citation
Wang, Huatao; Yang, Weiyou; Xie, Zhipeng; Wang, Yansong; and Xing, Feng, "Morphology Instability Of Silicon Nitride Nanowires" (2009). Scopus Export 2000s. 11937.
https://stars.library.ucf.edu/scopus2000/11937