Title

Stress-Mediated Redistribution Of Mn In Annealed Si:Mn

Keywords

Annealing; Ion implantation; Magnetic semiconductor; Manganese; Silicon; Solid phase epitaxy

Abstract

Buried amorphous silicon (a-Si) is produced in Czochralski single crystalline silicon implanted at 340 K with Mn+ (Si:Mn, 55Mn+ doses, D = 2 × 1015 or 1.2 × 1016 cm-2, energy 160 keV). Stress-mediated redistribution of Mn and solid phase epitaxial re-growth (SPER) of a-Si at up to 1273 K (HT), also under hydrostatic Ar pressure up to 1.1 GPa (HP), have been investigated by SIMS, X-ray and related methods. As-implanted Si:Mn indicates magnetic ordering. SPER depends on Mn+ dosage, HT, HP an on processing time. Processing at 870-1000 K results in a minimum in the Mn concentration at ∼0.15 μm depth. At 1170 K and above, the diffusion of Mn to the surface increases with HP. Our results help in understanding the mechanisms of SPER and of origin of magnetic ordering in Mn:Si. © 2008 Elsevier B.V. All rights reserved.

Publication Date

3-15-2009

Publication Title

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volume

159-160

Issue

C

Number of Pages

361-364

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/j.mseb.2008.09.005

Socpus ID

67349174987 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/67349174987

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