Title
Stress-Mediated Redistribution Of Mn In Annealed Si:Mn
Keywords
Annealing; Ion implantation; Magnetic semiconductor; Manganese; Silicon; Solid phase epitaxy
Abstract
Buried amorphous silicon (a-Si) is produced in Czochralski single crystalline silicon implanted at 340 K with Mn+ (Si:Mn, 55Mn+ doses, D = 2 × 1015 or 1.2 × 1016 cm-2, energy 160 keV). Stress-mediated redistribution of Mn and solid phase epitaxial re-growth (SPER) of a-Si at up to 1273 K (HT), also under hydrostatic Ar pressure up to 1.1 GPa (HP), have been investigated by SIMS, X-ray and related methods. As-implanted Si:Mn indicates magnetic ordering. SPER depends on Mn+ dosage, HT, HP an on processing time. Processing at 870-1000 K results in a minimum in the Mn concentration at ∼0.15 μm depth. At 1170 K and above, the diffusion of Mn to the surface increases with HP. Our results help in understanding the mechanisms of SPER and of origin of magnetic ordering in Mn:Si. © 2008 Elsevier B.V. All rights reserved.
Publication Date
3-15-2009
Publication Title
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume
159-160
Issue
C
Number of Pages
361-364
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/j.mseb.2008.09.005
Copyright Status
Unknown
Socpus ID
67349174987 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/67349174987
STARS Citation
Misiuk, A.; Barcz, A.; Bak-Misiuk, J.; Romanowski, P.; and Chow, L., "Stress-Mediated Redistribution Of Mn In Annealed Si:Mn" (2009). Scopus Export 2000s. 11998.
https://stars.library.ucf.edu/scopus2000/11998