Title
New Physical Insights On Power Mosfet Switching Losses
Keywords
Power converters; Power MOSFET; Switching power loss
Abstract
Realistic estimation of power MOSFET switching losses is critical for predicting the maximum junction temperature and efficiency of power electronics circuits. The purpose of this paper is to investigate the internal physics of MOSFET switching processes using a physically based semiconductor device modeling approach, and subsequently examine the commonly used power loss calculation method in light of the new physical insights. The widely accepted output capacitance loss term is found to be redundant and erroneous based on the new modeling and measurement results. In addition, the existing method of approximating switching times with the power MOSFET gate charge parameters grossly overestimates the switching power loss. This paper recommends a new MOSFET gate charge parameter specification and an effective switching time estimation method to compensate for the power loss calculation error introduced by the two-slope voltage transition waveform of the power MOSFET. © 2009 IEEE.
Publication Date
3-10-2009
Publication Title
IEEE Transactions on Power Electronics
Volume
24
Issue
2
Number of Pages
525-531
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/TPEL.2008.2006567
Copyright Status
Unknown
Socpus ID
61549120337 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/61549120337
STARS Citation
Xiong, Yali; Sun, Shan; Jia, Hongwei; Shea, Patrick; and John Shen, Z., "New Physical Insights On Power Mosfet Switching Losses" (2009). Scopus Export 2000s. 12004.
https://stars.library.ucf.edu/scopus2000/12004