Title

High-Power Semiconductor Lasers For Applications Requiring Ghz Linewidth Source

Keywords

GHz linewidth; High-power semiconductor laser; Volume Bragg grating

Abstract

In this paper we present the development of semiconductor laser systems with output powers reaching 100 W and linewidths down to 10 GHz. The combination of high power and narrow emission spectrum was achieved through external resonator configurations based on volume Bragg gratings. By using Bragg gratings with extremely narrow spectral selectivity we were able to narrower and lock emission spectra of diode lasers, with precise wavelength tuning achieved by thermal control of the volume grating. The thermal coefficient of our volume gratings was approximately 8 pm/K, which was low enough to guarantee stable frequency operating regime. We implemented successfully two such schemes for lasers generating at 780 nm and 1.55 μm as pumping sources for Rb vapor and Er-doped solid state lasers, correspondingly. © 2009 SPIE.

Publication Date

5-25-2009

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

7198

Number of Pages

-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.810058

Socpus ID

65649154153 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/65649154153

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