Title

The Effect Of Nitrogen On The Chemistry Of Sputter-Deposited Sic X N Y Films

Keywords

AFM; Silicon carbide; Sputtering; XPS

Abstract

Thin films of silicon carbide nitride (SiC x N y ) were deposited in an r.f. magnetron sputtering system using a SiC target. Films of different compositions were deposited by varying the ratios of argon and nitrogen in the sputtering ambient. X-ray photoelectron spectroscopy and atomic force microscopy studies on the deposited films indicated that the chemical states as well as the surface roughness are highly sensitive to the nitrogen ratios during sputtering. © 2001 Elsevier Science B.V. All rights reserved.

Publication Date

11-28-2001

Publication Title

Applied Surface Science

Volume

183

Issue

3-4

Number of Pages

270-277

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0169-4332(01)00588-8

Socpus ID

0035965611 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0035965611

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