Title

In-Situ Boron Doping Of Chemical-Bath Deposited Cds Thin Films

Abstract

In-situ boron doping of CdS using chemical-bath deposition (CBD) is reported. The effect of B doping on optical properties, as well as electrical properties, crystal structure, chemistry, and morphology of CdS films is studied. We present a successful approach towards B doping of CdS using CBD, where a resistivity as low as 1.7 × 10 -2 Ωcm and a carrier density as high as 1.91 × 10 19 cm -3 were achieved. The bandgap of B-doped films was found to slightly decrease as the [B]/[Cd] ratio in the solution increases. X-ray diffraction studies showed B 3+ ions likely enter the lattice substitutionally. A phase transition, due to annealing, as well as induced lattice defects, due to B doping, were detected by microRaman spectroscopy and transmission electron microscopy. The chemistry and morphology of films were unaffected by B doping. © 2009 WILEY-VCH Verlag GmbH & Co, KGaA.

Publication Date

2-1-2009

Publication Title

Physica Status Solidi (A) Applications and Materials Science

Volume

206

Issue

2

Number of Pages

256-262

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1002/pssa.200824290

Socpus ID

62549138271 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/62549138271

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