Title

Infrared Photoconductivity In Heavily Nitrogen Doped A-Si:H

Abstract

High frequency steady-state photoconductivity in nitrogen doped hydrogenated amorphous silicon (a-Si:H-N) films has been demonstrated at infrared (IR) frequencies of 650 to 2000 cm-1. This allows IR photoconductivity to be excited using a simple thermal source. In order to produce high frequency photoconductivity effects, the plasma frequency must be increased to the desired device operation frequency or higher as described by the Drude model. IR ellipsometry was used to measure the steady-state permittivity of the a-Si:H-N films as a function of pump illumination intensity. The largest permittivity change was found to be Δεr = 2 resulting from a photo-carrier concentration on the order of 1022 cm-3. IR photoconductivity is shown to be limited by the effective electron mobility. © 2009 Materials Research Society.

Publication Date

1-1-2009

Publication Title

Materials Research Society Symposium Proceedings

Volume

1153

Number of Pages

9-14

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1557/proc-1153-a02-02

Socpus ID

77951129120 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/77951129120

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