Title

Performance Analysis Of Cuin1-XGaXS2 (Cigs2) Thin Film Solar Cells Based On Semiconductor Properties

Keywords

CIGS2; PV parameters; Thin-film solar cells

Abstract

CuIn1-xGaxS2 (CIGS2) has a bandgap of ∼1.5 eV making it an ideal candidate for space applications. CIGS2 thin films were prepared by sulfurizing CuGa/In precursor on Mo-coated glass/ stainless steel (SS) substrates in N2:H2S (4% or 8%) mixture at 475° C. PV parameters measured under AM1.5 conditions at NREL were as follows: the first cell on stainless steel substrate, Voc = 763.3 mV, Jsc = 20.26 mA/cm2, FF = 67.04% and η = 10.4% and for the second cell on Mo-coated glass substrate, Voc = 830.5 mV, Jsc = 20.88 mA/cm2, FF = 69.13% and η = 11.99%. A detailed comparative study of PV parameter of the two cells showed that the increase in the efficiency from 10.4% to 11.99% was made possible by an increase of shunt resistance Rp in the dark from 1160 Ω-cm2 to 2500 Ω-cm2; a slight reduction of series resistance Rs; and a reduction of the diode factor, A and reverse saturation current density, Jo respectively from ∼2.1 and ∼2.6×l0-8 A cm-2 to ∼1.72 and ∼1.41×l0-10 A cm-2.

Publication Date

12-1-2007

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

6651

Document Type

Article; Proceedings Paper

DOI Link

https://doi.org/10.1117/12.734605

Socpus ID

42149125709 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/42149125709

This document is currently not available here.

Share

COinS