Title

Preparation And Properties Of Cigs And Cigss Thin Films Using Dese As A Selenium Source And H 2S As Sulfur Source

Abstract

Cu(In 1-xGa x)(Se 1-yS y) 2 (CIGSS) thin films were prepared at the FSEC photovoltaic materials lab in two steps. The first step consisted of deposition of CuGa-In precursors using DC magnetron sputtering on molybdenum back contact. The second step involved selenization/sulfurization of these precursors. Selenization was carried out using diethylselenide (DESe) as a selenium source and H 2S as sulfur source. CIGSS thin-film solar cells were completed by depositing n-type CdS layer by chemical bath deposition (CBD), ZnO/ZnO:Al window bilayer by RF magnetron sputtering and Ni-Al front contacts by e-beam evaporation. This paper describes the new DESe set-up developed at FSEC PV Materials Lab and preparation and properties of CuIn 1-xGa xSe 2 (GIGS) and CIGSS thin films. © 2005 IEEE.

Publication Date

11-30-2005

Publication Title

Conference Record of the IEEE Photovoltaic Specialists Conference

Number of Pages

414-417

Document Type

Article; Proceedings Paper

Socpus ID

27944449761 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/27944449761

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