Title

Role Of I-Zno In Optimizing Open Circuit Voltage Of Cigs2 And Cigs Thin Film Solar Cells

Abstract

It is a customary in the preparation of CuIn1-xGa xSe2 (CIGS) or CuIn1-xGaxS 2 (CIGS2) solar cells, to use an un-doped layer of ZnO (i-ZnO) on the CdS layer prior to the deposition of a doped layer (ZnO:Al). This paper presents reasons behind the need for i-ZnO layer and also the effect of its thickness on the open circuit voltage of the CIGS2 based thin film solar cells. It was found that thickness of i-ZnO layer must be optimized depending on the surface roughness of CIGS2 absorber layer. CIGS2/CdS solar cells having optimum i-ZnO thickness were prepared and a photovoltaic conversion efficiency of 11.99% with open circuit voltage, VOC of 830.5 mV under AM 1.5 conditions were obtained. The AMO efficiency measured at NASA GRC for the same CIGS2 solar cell was 10.25%. © 2006 IEEE.

Publication Date

1-1-2006

Publication Title

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Volume

1

Number of Pages

557-559

Document Type

Article; Proceedings Paper

DOI Link

https://doi.org/10.1109/WCPEC.2006.279516

Socpus ID

41749098824 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/41749098824

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