Title

Analytical Mosfet Breakdown Model Including Self-Heating Effect

Abstract

This paper presents an analytical breakdown model including self-heating effect (SHE) for NMOSFET devices. Model evaluation is taken for a wide ambient temperature range, from room temperature to 200 °C. It is found that the device self-heating effect is suppressed when ambient temperature is increased. In addition, our results suggest that the conventional MOSFET breakdown model without considering the self-heating effect can overestimate the breakdown characteristics for the short-channel devices.

Publication Date

1-1-2000

Publication Title

Solid-State Electronics

Volume

44

Issue

1

Number of Pages

125-131

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(99)00198-7

Socpus ID

0033640186 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0033640186

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