Title

Uniform Acceptor Distribution In Neutron Transmutation Doped Far-Infrared P-Ge Lasers

Keywords

Far-infrared; Neutron Transmutation Doping; P-Germanium; Semiconductor Laser; Sub-millimeter; Terahertz

Abstract

A neutron transmutation doped (NTD) far-infrared p-Ge laser crystal and a melt-grown p-Ge laser are analyzed and compared. Though the doping level in the NTD active crystal is twice lower than optimal, the laser performance is comparable to that produced from high-quality melt-grown crystals because of superior dopant uniformity. Compensation was examined by comparing results of neutron activation analysis with majority carrier concentration. Study of impurity breakdown electric field reveals better crystal quality in NTD. The current saturation behavior confirms the expected higher doping uniformity over melt grown laser rods.

Publication Date

11-26-2003

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

5087

Number of Pages

133-140

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.485798

Socpus ID

0242635619 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0242635619

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