Title

Effect Of Gate-Oxide Breakdown On Rf Performance

Keywords

Circuit reliability; Dielectric breakdown; Equivalent circuit; Low-noise amplifier (LNA); RF; Scattering parameters

Abstract

The degradation of S-parameters of 0.16-μm nMOS devices due to gate-oxide breakdown is examined. An equivalent circuit model for MOSFETs after gate-oxide breakdown is proposed. The influence of nMOSFET gate-oxide breakdown on the performance of a low-noise amplifier is studied using the equivalent circuit model. Depending on which device and how many fingers break down, the circuit continues to work, despite that the performance of S-parameters and noise figure degrades significantly.

Publication Date

9-1-2003

Publication Title

IEEE Transactions on Device and Materials Reliability

Volume

3

Issue

3

Number of Pages

93-97

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/TDMR.2003.816656

Socpus ID

3042557108 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/3042557108

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