Title

Gate Oxide Breakdown On Low Noise And Power Amplifier Performance

Abstract

This paper, for the first time, studies the influence nMOSFET gate oxide breakdown (BD) has on the performance of CMOS low noise amplifiers (LNA) and power amplifiers (PA) using an equivalent RF circuit model. Cascode LNAs are found to be more reliable than common source LNAs in terms of gate oxide reliability. It is shown for a Class-E PA oxide breakdown effects lead to an increase in the switching transistor's "on" voltage, which, in turn leads to substantial decreases in the output power and drain efficiency.

Publication Date

8-22-2003

Publication Title

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Number of Pages

663-666

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0042160265 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0042160265

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