Title

Development Of 50 Mm Diameter Non-Polar Gallium Nitride Substrates For Device Applications

Abstract

We report the development of large 50 mm diameter free standing wafers of GaN. GaN layers up to 350 μm thick have been grown by HVPE on lattice-matched LiAlO2 substrates. The original oxide substrates were removed by wet chemical etching, and the defect structure of the GaN wafers has been investigated. The issue of stacking faults vs. polar inversion domains has been resolved in favor of ABABACAC stacking sequences. A UV-emitting LED (368 nm) has been developed on these substrates, using molecular beam epitaxy.

Publication Date

7-25-2003

Publication Title

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Number of Pages

567-570

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0037810733 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0037810733

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