Title

Effect Of Gate Oxide Breakdown On Rf Device And Circuit Performance

Abstract

The degradation of S-parameters of 0.16 um NMOS devices due to gate oxide breakdown is examined. An equivalent circuit model for MOSFETs after gate oxide breakdown is proposed. The influence of nMOSFET BD on the performance of a low noise amplifier is studied using the equivalent circuit model. Depending on which device and how many fingers breakdown, there is a nonzero probability that the circuit continues to work, despite that the performance of S-parameters and noise figure drastically degrades. Gate oxide breakdown.

Publication Date

7-21-2003

Publication Title

Annual Proceedings - Reliability Physics (Symposium)

Number of Pages

1-4

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0037973058 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0037973058

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